High Optical Power, Highly Linear 2.2 Micron InGaAs Photodiodes
Dec. 5, 2016
Related To: Discovery Semiconductors Inc
The 2.2 micron cutoff, uncooled, InGaAs high speed Photodiodes are hermetically sealed, fiber pigtailed, and designed for high optical power applications with bandwidth up to 5 GHz. The devices are well suited for applications using fiber amplifiers, and are available in either a K-Connector package, a miniature surface mount package with CPW (coplanar weveguide) RF output or Discovery's turn-keyLab Buddy instrument, and utilizes Discovery's high reliability InGaAs photodiode technology.